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parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -11.5 i d @ t a = 70c continuous drain current, v gs @ -4.5v -9.2 a i dm pulsed drain current -46 p d @t a = 25c power dissipation 2.5 p d @t a = 70c power dissipation 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 8 v t j, t stg junction and storage temperature range -55 to +150 c hexfet power mosfet

top view 8 1 2 3 4 5 6 7 d d d g s a d s s so-8
features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance

!" form quantity tube/bulk 95 irf7420pbf-1 tape and reel 4000 irf7420trpbf-1 package type standard pack orderable part number irf7420pbf-1 so-8 base part number v ds -12 v r ds(on) max (@v gs = -4.5v) 14 m r ds(on) max (@v gs = -2.5v) 17.5 m r ds(on) max (@v gs = -1.8v) 26 m q g (typical) 38 nc i d (@t a = 25c) -11.5 a

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parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.5a, v gs = 0v t rr reverse recovery time ??? 62 93 ns t j = 25c, i f = -2.5a q rr reverse recovery charge ??? 61 92 c di/dt = -100a/ s source-drain ratings and characteristics # $ 46 %%% %%% %%% $ 2.5 %%% s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle & electrical characteristics @ t j = 25c (unless otherwise specified) surface mounted on 1 in square cu board, t 10sec. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.007 ??? v/c reference to 25c, i d = -1ma ??? ??? 14 v gs = -4.5v, i d = -11.5a %%% ??? 17.5 v gs = -2.5v, i d = -9.8a %%% ??? 26 v gs = -1.8v, i d = -8.1a v gs(th) gate threshold voltage -0.4 ??? -0.9 v v ds = v gs , i d = -250 a g fs forward transconductance 32 ??? ??? s v ds = -10v, i d = -11.5a ??? ??? -1.0 v ds = -9.6v, v gs = 0v ??? ??? -25 v ds = -9.6v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -8v gate-to-source reverse leakage ??? ??? 100 v gs = 8v q g total gate charge ??? 38 ??? i d = -11.5a q gs gate-to-source charge ??? 8.1 ??? nc v ds = -6v q gd gate-to-drain ("miller") charge ??? 8.7 ??? v gs = -4.5v t d(on) turn-on delay time ??? 8.8 13 v dd = -6v, v gs = -4.5v t r rise time ??? 8.8 13 i d = -1.0a t d(off) turn-off delay time ??? 291 437 r d = 6 t f fall time ??? 225 338 r g = 6 c iss input capacitance ??? 3529 ??? v gs = 0v c oss output capacitance ??? 1013 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 656 ??? ? = 1.0mhz i gss a m r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -11.5a 0.1 1 10 100 0.5 1.0 1.5 2.0 2.5 v = -10v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20 s pulse width tj = 25c vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20 s pulse width tj = 150c vgs top -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v bottom -1.0v

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fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 1 2 3 4 5 6 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -11.5a v = -6v ds v = -9.6v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 -v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 3 6 9 12 t , case temperature ( c) -i , drain current (a) c d ( (

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0.1 % ( ( )* + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
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fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 2.0 4.0 6.0 8.0 -v gs, gate -to -source voltage (v) 0.005 0.010 0.015 0.020 0.025 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = -11.5a 0.0 10.0 20.0 30.0 40.0 50.0 -id , drain current ( a ) 0 0.02 0.04 0.06 0.08 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = -2.5v v gs = -1.8v v gs = -4.5v
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fig 15. typical vgs(th) vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 - v g s ( t h ) ( v ) i d = -250 a fig 16 typical power vs. time 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 50 100 150 200 250 300 350 400 p o w e r ( w )
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so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mi l l ime t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: this is an irf7101 (mos fet ) f 7101 xxxx international logo rect ifier part number lot code product (optional) dat e code (yww) y = last digit of the year ww = we e k a = as s e mb l y s i t e cod e note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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